Temperature dependent leakage sensors using specially designed DRAM cells ECE658 VLSI Design Final Project
نویسندگان
چکیده
The DRAM cells consist of one or several MOSFET devices and the subthreshold leakage current through the MOSFET strongly depends on the temperature variation. Therefore, it is obvious that the leakage of a memory cell is highly related to temperature variation. The temperature of the circuit can be measured indirectly by using leakage sensors which can be applied to various VLSI circuits because of its small size and compatibility. Motivated by the thermal sensitivity of the MOSFET and the circuit devices, we studied leakage based thermal sensors in different technologies such as 130nm, 65nm and 45nm and 3 types of leakage devices from MOSFET to the circuit. First, we showed the IV characteristics and the subthreshold leakage current through each MOSFET. Then, we tried to find out how the subthreshold leakage current through the MOSFET make the leakage sensors possible. Finally, we obtained the plot for leakage and temperature, the power consumptions, areas and noise immunity for each leakage devices.
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